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(R)
STTA1512P/PI
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS
s
15A 1200V 55ns 1.9V
K
s
s
s
s
ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance : 12pF
A
A K
K
SOD93 STTA1512P
Isolated DOP3I STTA1512PI
DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 50 220 150 - 65 to + 150 150 Unit V A A A C C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes.
TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 6A
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STTA1512P/PI
THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 15A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 DOP3I SOD93 DOP3I SOD93 DOP3I Tc= 95C Tc= 78C Tc= 89C Tc= 70C Conditions Value 1.6 2.1 34 38 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR
**
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test conditions IF =15A VR =0.8 x VRRM Ip < 3.IF(AV) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 125C
Min
Typ 1.3 1.3
Max 2.1 1.9 100 6.0 1.48 25
Unit V V A mA V m
Vto Rd
Test pulses :
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -120 A/s dIF/dt = -500 A/s Tj = 125C VR = 600V dIF/dt = -500 A/s IF =15A 20 33 IF =15A 1.2 / Min Typ 55 105 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25C IF =15 A, dIF/dt = 120 A/s measured at 1.1 x VFmax Tj = 25C IF =15A, dIF/dt = 120 A/s IF =40A, dIF/dt = 500 A/s Min Typ Max 900 V 30 40 Unit ns
VFp
Peak forward voltage
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STTA1512P/PI
Fig. 1: Conduction losses versus average current.
P1(W) 40 30
= 0.1 = 0.1 = 0.2 = 0.5
Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A) 200 100
Tj=125C
20
10
10 IF(av) (A) 0 0 2 4 6 8 10 12 14
=tp/T
T
tp
VFM(V)
20
16
18
1 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 50 40 30
VR=600V Tj=125C IF=2*IF(av)
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
IF=IF(av)
0.4
= 0.2
20
IF=0.5*IF(av)
= 0.1
0.2
10
Single pulse
tp(s) 1E-2 1E-1 1E+0
0 0 100
0.0 1E-4
dIF/dt(A/s)
1E-3
200
300
400
500
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 800 700 600 500 400 300 200
IF=0.5*IF(av) IF=IF(av) IF=2*IF(av) VR=600V Tj=125C
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values).
S factor 2.00
IF<2*IF(av) VR=600V Tj=125C
1.80 1.60 1.40 1.20 1.00 0.80
100 0
dIF/dt(A/s)
0 100 200 300 400 500
0.60
dIF/dt(A/s)
0
100
200
300
400
500
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STTA1512P/PI
Fig. 7: Relative variation of dynamic parameters versus junction temperature.
S factor
Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 70
IF=IF(av) Tj=125C
1.1
60
1.0
S factor
50 40
0.9
IRM
30 20 10
0.8 Tj(C) 0.7 25
dIF/dt(A/s)
0
50
75
100
125
0
100
200
300
400
500
Fig. 9: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 600 500 400 300 200 100
VFR=1.1*VF max. IF=IF(av) Tj=125C
dIF/dt(A/s)
0 100 200 300 400 500
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STTA1512P/PI
APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
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STTA1512P/PI
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM tp T = tp/T
F = 1/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vto . IF(AV) + Rd . IF2(RMS)
Reverse losses : P2 = VR . IR . (1 - )
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STTA1512P/PI
APPLICATION DATA (Cont'd) Fig. F: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
V R x I RM
2
x( 3+
2xS )xF
6 x dI F dt V R x I RM x I L x ( S + 2 ) x F + 2 x dI F dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
V R x I RM
2
xSxF
6 x dI F
dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : (with non negligible serial inductance) + 6 x dI F dt L x I RM 2 x F 2 P3,P3' and P5 are suitable for power MOSFET and IGBT P3' =
2
V R x I RM
x S xF
Fig. G: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA1512P/PI
PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O 4.00 3.95 31.00 4.10 0.157 18.0 4.15 0.156 1.220 0.161 10.80 14.70 0.50 1.10 1.75 11.10 0.425 15.20 0.578 12.20 16.20 0.709 0.163 Millimeters 4.70 1.17 2.50 1.27 0.78 0.020 1.30 0.043 0.069 0.437 0.598 0.480 0.638 4.90 0.185 1.37 0.046 0.098 0.050 0.031 0.051 Inches 0.193 0.054 Min. Typ. Max. Min. Typ. Max.
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STTA1512P/PI
PACKAGE MECHANICAL DATA DOP3I (insulated) DIMENSIONS REF. A B C D E F G H K L N P R Millimeters Min. 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 3.4 4.08 10.8 1.20 Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 3.65 4.17 11.3 1.40 Inches Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.134 0.161 0.425 0.047 Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.144 0.164 0.444 0.055
4.60 typ.
0.181 typ.
Ordering type STTA1512P STTA1512PI
s
Marking STTA1512P STTA1512PI
Package SOD93 DOP3I
Weight 3.79g 4.52g
Base qty 30 120
Delivery mode Tube Bulk
s
s
s
Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9

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